Samsung Foundry's second-gen 3nm yield, at 20%, is costing Samsung some business from major fabless chip designers like ...

Fin field-effect transistor, or FinFET, is used from 16/14 nm onward. After FinFET comes gate all around, or GAA, which will be adopted on TSMC's 2 nm and Samsung's 3 nm nodes. Successive ...

It also chose to adopt a gate-all-around (GAA) transistor instead of using FinFET for 3nm, placing it years ahead of its competitors. However, that bet appears to have not paid off, as a new ...

Read why ASM is a leader in atomic layer deposition equipment for advancing transistor structures, making the stock a buy at ...

The question is what’s after high-mobility finFETs? It’s still unclear, but experts believe the ultimate device is the gate-all-around (GAA) finFET. GAA-based devices claim to have the best ...

Achieving system-on-chip (SoC) timing closure is a major obstacle in the FinFET era. Even though designers can now use faster transistors that consume and leak less power than before, FinFET ...

FinFETs form the foundation for many of today’s semiconductor fabrication techniques but also create significant design concerns that affect your layout. Understanding the changes and design ...

thanks to the advantageous GAA technology. There are reports that TSMC will use the second-generation 3nm process with FinFET transistors for the Qualcomm Snapdragon 8 Gen 4 processor. However ...

FinFET and Gate-All-Around (GAA) transistor technologies, enabling semiconductor companies to accelerate technology development. Silvaco’s latest TCAD technology platform, enables advanced CMOS ...