Samsung Foundry's second-gen 3nm yield, at 20%, is costing Samsung some business from major fabless chip designers like ...

Read why ASM is a leader in atomic layer deposition equipment for advancing transistor structures, making the stock a buy at ...

Following Intel's initial success, Samsung and TSMC developed their own FinFET chips, advancing the technology to 16 nm and 14 nm nodes. Now, the industry is moving towards Gate-All-Around (GAA ...

UMC seeks to improve capital efficiency by requiring guarantee payments for customers who want to reserve capacity. The company has more than TWD 30 billion in customer prepayments sitting on its ...

The 18A project is Intel Foundry’s RibbonFET transistor, which replaces its FinFET transistor with a gate-all-around (GAA) transistor model. Roy also hopes to hear about the technology roadmap ...

featuring their own take on Gate-All-Around (GAA) technology. Samsung: The first to implement GAAFET with its 3nm 3GAE process, but struggling with yield issues. Compared to the FinFET architecture ...

The TCAD Baseline Release expands to support planar CMOS, FinFET, and GAA transistor technologies, enabling semiconductor companies to accelerate technology development. The platform offers ...

AMAT's expertise in materials science also makes it a leader in cutting-edge logic, especially as the semiconductor industry ...